In the context of the rapid development of smart grids and new energy sources, the problem of power quality is becoming more and more prominent. Voltage fluctuations, harmonic pollution, low power factor and other problems not only affect the life of the equipment, but also threaten the safety of the power grid. As a core device in the field of power electronics, IGBT (Insulated Gate Bipolar Transistor) has become a key technical support to improve power quality due to its high voltage, high current, high frequency switching and low loss characteristics.

From reactive power compensation to harmonic suppression, from energy storage systems to smart grids, IGBTs have become the core engine of power quality management. Its high efficiency, precision and reliability have not only solved the performance bottleneck of traditional power electronic equipment, but also promoted the evolution of the power grid to clean, flexible and intelligent direction. With the technology iteration and scene expansion, IGBT will continue to empower the global energy transformation and provide solid support for the construction of a low-carbon, high-efficiency modern energy system.