- Product Summary
LS450R120L2H1 is a 1200V/450A IGBT power module, employing a half-bridge (half-bridge) topology, with an internal freewheeling diode. The maximum junction temperature reaches 175°C, the typical saturation voltage is 1.8V at 25°C, and the thermal resistance (IGBT junction – case) is only 0.058 K/W. This module can seamlessly replace Infineon FF450R12KT4, Semikron SKM450GB12T4, Semikron SKM400GB12T4 and Starpower GD450HFY120C2S, and is suitable for industrial inverter applications such as motor drives and frequency converters.
The LS450R120L2H1 is an IGBT power module with L2 package (62mm half-bridge) and its internal circuit is of half-bridge structure. Based on the advanced trench gate field cutoff technology, this module achieves low on-state voltage drop and positive temperature coefficient characteristics, facilitating parallel use. The maximum operating junction temperature is 175°C, providing a reliable thermal margin for high power density applications.
Main technical parameters
- Quality Assurance and Factory Testing
Statistical Process Control (SPC): From wafer manufacturing to module assembly, all key parameters (such as VCEsat, Vth, RthJC) are subject to SPC monitoring throughout the entire process to ensure consistency between batches.
100% Dynamic Testing: Each module undergoes the following tests before leaving the factory:
Saturation voltage drop (VCEsat) test
Gate threshold voltage (VGE(th)) test
Collector Cut-off Current (ICES) Test
Insulation withstand voltage test (Visol = 2500V)
Switch parameter sampling test (ton, toff, Eon, Eoff)
Full-process traceability: Each module is assigned a unique serial number, which can be traced back to the production batch, test data, and operators.
