LS200R120L2H1 is a 200A/1200V half-bridge IGBT module, featuring a standard 62mm package. It can directly replace Infineon FF200R12KT4, Semikron SKM200GB12T4 and Starpower GD200HFY120C2S. This module is fully comparable to the above-mentioned mainstream models in terms of electrical performance and package…
Advantages of domestic production of power semiconductors
In the field of industrial automation, servo drives and communication power supplies, it has always been a challenge for engineers to strike a perfect balance between high power density, high efficiency and high reliability. Recently, Infineon, a leader in power…
November 15, 2025, China – As the “CPU” of power electronics, IGBTs (Insulated Gate Bipolar Transistors) are driving the transformation of new energy, industrial control, rail transportation and other fields at an astonishing speed. new energy, industrial control, rail transportation…
In a landmark move within the global semiconductor landscape, Infineon Technologies AG, a leading semiconductor company headquartered in Neubiberg, Germany, and renowned for its prowess in power systems and the Internet of Things (IoT), has joined forces with ROHM Semiconductor,…
Driven by the global wave of carbon neutrality and China’s “Manufacturing Powerhouse” strategy, IGBT (Insulated Gate Bipolar Transistor) has emerged as the “heart” of electrical power conversion and control. It has become a core foundation for strategic emerging industries such…
LS450R120L2H1 is a 1200V/450A IGBT power module, employing a half-bridge (half-bridge) topology, with an internal freewheeling diode. The maximum junction temperature reaches 175°C, the typical saturation voltage is 1.8V at 25°C, and the thermal resistance (IGBT junction – case) is…
High-performance alternative solution
